MBM29F080A-70PF View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MBM29F080A-70PF

FLASH MEMORY CMOS 8M (1M ×8) BIT

Fujitsu 

MBM29F080A-55/-70/-90

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s DC CHARACTERISTICS

Parameter

Symbol

Parameter Description

Test Conditions

Min.

Max. Unit

ILI

Input Leakage Current

VIN = VSS to VCC, VCC = VCC Max.

—

ILO

Output Leakage Current

VOUT = VSS to VCC,

VCC = VCC Max.

—

ILIT

A9, OE, RESET Inputs Leakage VCC = VCC Max.

Current

A9, OE, RESET = 12.5 V

—

ICC1

VCC Active Current (Note 1)

CE = VIL, OE = VIH

—

±1.0

µA

±1.0

µA

50

µA

40

mA

ICC2

VCC Active Current (Note 2)

CE = VIL, OE = VIH

—

45

mA

ICC3

VCC Current (Standby)

VCC = VCC Max., CE = VIH

RESET = VIH

—

VCC = VCC Max., CE = VCC ±0.3 V,

RESET = VCC ±0.3 V

—

1

mA

5

µA

VCC = VCC Max.

RESET = VIL

ICC4

VCC Current (Standby, Reset)

VCC = VCC Max.

RESET = VSS ±0.3 V

—

1

mA

—

5

µA

VIL

Input Low Level

VIH

Input High Level

—

–0.5

0.8

V

—

2.0

VCC+0.5 V

Voltage for Autoselect and Sector

VID

Protection (A9, OE, RESET)

—

(Note 3, 4)

11.5

12.5

V

VOL

Output Low Voltage Level

IOL = 12.0 mA, VCC = VCC Min.

—

0.45

V

VOH1

VOH2

VLKO

Output High Voltage Level

Low VCC Lock-Out Voltage

IOH = –2.5 mA, VCC = VCC Min.

2.4

—

V

IOH = –100 µA

VCC–0.4

—

V

—

3.2

4.2

V

Notes: 1. The ICC current listed includes both the DC operating current and the frequency dependent component

(at 6 MHz). The frequency component typically is 2 mA/MHz, with OE at VIH.

2. ICC active while Embedded Algorithm (program or erase) is in progress.

3. Applicable to sector protection function.

4. (VID – VCC) do not exceed 9 V.

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