MCIMX25(2009) View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

Manufacturer

MCIMX25
(Rev.:2009)

i.MX25 Applications Processor for Consumer and Industrial Products

Freescale Semiconductor 

Table 15. DDR2 (SSTL_18) I/O DC Electrical Characteristics (continued)

DC Electrical Characteristics

Symbol

Test

Conditions

Min.

Typ.

Max.

Units Notes

DC input signal voltage(for

differential signal)

Vin(dc)

—

–0.3

—

OVDD + 0.3

V

3

DC differential input voltage

Vid(dc)

—

0.25

—

OVDD+0.6

V

4

Termination voltage

Vtt

—

OVDD/2 – 0.04 OVDD/2 OVDD/2 + 0.04

5

Input current (no pull-up/down)

IIN

VI = 0

—

VI = OVDD

—

110

nA

9

60

High-impedance I/O supply current Icc-ovdd VI = OVDD or 0

—

—

980

nA

9

High-impedance core supply

Icc-vddi VI = VDD or 0

—

current

—

1210

nA

Note:

1. OVDD = 1.7 V; Vout = 1.42 V. (Vout-OVDD)/IOH must be less than 21 W for values of Vout between OVDD and OVDD-0.28 V.

2. OVDD = 1.7 V; Vout = 280 mV. Vout/IOL must be less than 21 W for values of Vout between 0 V and 280 mV. Simulation circuit

for parameters Voh and Vol for I/O cells is below

3. Vin(dc) specifies the allowable DC excursion of each differential input

4. Vid(dc) specifies the input differential voltage required for switching. The minimum value is equal to Vih(dc) - Vil(dc).

5. Vtt is expected to track OVDD/2.

6. Minimum condition: BCS model, 1.95 V, and –40 °C. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition:

wcs model, 1.65 V, and 105 °C.

7. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition: BCS model, 1.95 V, and 105 °C.

8. The JEDEC SSTL_18 specification (JESD8-15a) for a SSTL interface for class II operation supersedes any specification in

this document.

3.4.2 GPIO I/O DC Parameters

Table 16 shows the I/O parameters for GPIO.

Table 16. GPIO DC Electrical Characteristics

DC Electrical Characteristics

High-level output voltage

Low-level output voltage

High-level output current for slow

mode

High-level output current for fast

mode

Symbol Test Conditions

Min.

Typ.

Max.

Units Notes

Voh

Ioh=–1mA

OVDD – 0.15 —

—

V

1

Ioh = Specified Drive 0.8 × OVDD

Vol

Iol=1mA

—

Iol=Specified Drive

I

Voh=0.8 × OVDD

Standard Drive

–2.0

Ioh

High Drive

–4.0

Max. Drive

–8.0

—

0.15

V

1

0.2 × OVDD

—

—

mA —

I

Voh=0.8 × OVDD

Standard Drive

Ioh

High Drive

Max. Drive

—

–4.0

–6.0

–8.0

—

mA —

i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 2

20

Freescale Semiconductor

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