PEMD15 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMD15 Datasheet PDF : 10 Pages
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NXP Semiconductors
PEMD15; PUMD15
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
VI
input voltage TR1
positive
-
negative
-
input voltage TR2
positive
-
negative
-
IO
output current (DC)
-
ICM
peak collector current
-
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1] -
SOT666
[1][2] -
Tstg
storage temperature
−65
Tj
junction temperature
-
Tamb
ambient temperature
−65
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1] -
SOT666
[1][2] -
Max Unit
50
V
50
V
10
V
+30
V
−10
V
+10
V
−30
V
100
mA
100
mA
200
mW
200
mW
+150 °C
150
°C
+150 °C
300
mW
300
mW
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMD15_PUMD15_3
Product data sheet
Rev. 03 — 2 September 2009
© NXP B.V. 2009. All rights reserved.
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