PEMD15 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMD15 Datasheet PDF : 10 Pages
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NXP Semiconductors
PEMD15; PUMD15
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT666
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT666
Min Typ Max
[1] -
-
625
[1][2] -
-
625
[1] -
-
416
[1][2] -
-
416
[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Unit
K/W
K/W
K/W
K/W
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
-
-
100 nA
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
-
-
1
µA
-
-
50 µA
-
-
0.9 mA
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 10 mA
IC = 10 mA; IB = 0.5 mA
30 -
-
-
-
150 mV
VI(off)
VI(on)
R1
off-state input voltage VCE = 5 V; IC = 100 µA
on-state input voltage VCE = 0.3 V; IC = 20 mA
bias resistor 1 (input)
-
1.1 0.5 V
2.5 1.9 -
V
3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio
0.8 1
1.2
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
TR1 (NPN)
-
-
2.5 pF
TR2 (PNP)
-
-
3
pF
PEMD15_PUMD15_3
Product data sheet
Rev. 03 — 2 September 2009
© NXP B.V. 2009. All rights reserved.
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