NXP Semiconductors
PEMD15; PUMD15
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ
103
hFE
102
10
006aaa030
(1)
(2)
(3)
1
VCEsat
(V)
10−1
006aaa031
(1)
(2)
(3)
1
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
10
006aaa032
10−2
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2.
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
10
006aaa033
VI(on)
(V)
(1)
1 (2)
(3)
VI(off)
(V)
(1)
1
(2)
(3)
10−1
10−1
1
10
102
IC (mA)
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. TR1 (NPN): On-state input voltage as a
function of collector current; typical values
10−1
10−2
10−1
1
10
IC (mA)
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. TR1 (NPN): Off-state input voltage as a
function of collector current; typical values
PEMD15_PUMD15_3
Product data sheet
Rev. 03 — 2 September 2009
© NXP B.V. 2009. All rights reserved.
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