T200EN View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
T200EN Datasheet PDF : 13 Pages
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
Symbol
Parameter
Tamb
ambient temperature
Tstg
storage temperature
Source-drain diode
IS
source current
Conditions
Tamb = 25 °C
Min Max Unit
-55 150 °C
-65 150 °C
[1]
-
1.6 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
120
017aaa123
120
017aaa124
Pder
Ider
(%)
(%)
80
80
40
40
0
- 75
- 25
25
75
125
175
Tj (°C)
Fig. 1. Normalized total power dissipation as a
function of junction temperature
0
- 75
- 25
25
75
125
175
Tj (°C)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
10
ID
(A)
1
10-1
Limit RDSon = VDS/ID
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
aaa-005458
tp = 10 µs
tp = 100 µs
tp = 1 ms
tp = 10 ms
tp = 100 ms
10-2
10-1
1
IDM = single pulse
10
102
103
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
PMT200EN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
25 October 2012
3 / 13
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