T200EN View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

T200EN

100 V N-channel Trench MOSFET

NXP Semiconductors. 

NXP Semiconductors

PMT200EN

100 V N-channel Trench MOSFET

6. Thermal characteristics

Table 6.

Symbol

Rth(j-a)

Rth(j-sp)

Thermal characteristics

Parameter

Conditions

thermal resistance

from junction to

ambient

in free air

in free air; t ≤ 5 s

thermal resistance

from junction to solder

point

Min Typ Max Unit

[1]

-

135 155 K/W

[2]

-

60

70

K/W

[2]

-

31

36

K/W

-

12

15

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

103

aaa-005459

Zth(j-a)

(K/W)

102

10

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

1

10-3

10-2

10-1

1

FR4 PCB, standard footprint

10

102

103

tp (s)

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMT200EN

Product data sheet

All information provided in this document is subject to legal disclaimers.

25 October 2012

© NXP B.V. 2012. All rights reserved

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