T200EN View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
T200EN Datasheet PDF : 13 Pages
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
102
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
10 0.1
0.05
0.02
0.01
0
aaa-005460
1
10-3
10-2
10-1
1
FR4 PCB, mounting pad for drain 6 cm2
10
102
103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 1.5 A; Tj = 25 °C
VGS = 10 V; ID = 1.5 A; Tj = 150 °C
VGS = 4.5 V; ID = 1 A; Tj = 25 °C
gfs
forward
VDS = 10 V; ID = 1.5 A; Tj = 25 °C
transconductance
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = 80 V; ID = 1.5 A; VGS = 10 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = 80 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
PMT200EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 October 2012
Min Typ Max Unit
100 -
-
V
1.3 1.7 2.5 V
-
-
1
µA
-
-
100 nA
-
-
-100 nA
-
190 235 mΩ
-
420 520 mΩ
-
200 270 mΩ
-
5
-
S
-
7.4 10
nC
-
0.7 -
nC
-
1.9 -
nC
-
315 475 pF
-
35
-
pF
© NXP B.V. 2012. All rights reserved
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