T200EN View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
T200EN Datasheet PDF : 13 Pages
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NXP Semiconductors
PMT200EN
100 V N-channel Trench MOSFET
Symbol
Parameter
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
Conditions
VDS = 50 V; ID = 1.5 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
IS = 1.6 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-
25
-
pF
-
4
-
ns
-
5
-
ns
-
11
-
ns
-
3
-
ns
-
0.8 1.2 V
7
ID
(A)
6
5
4
10 V 4.5 V
aaa-005461
3.3 V
3V
10-3
ID
(A)
10-4
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min
typ
max
3
10-5
2
2.7 V
1
0
0
1
Tj = 25 °C
VGS = 2.4 V
2
3
4
VDS (V)
10-6
0
1
Tj = 25 °C; VDS = 5 V
2
3
VGS (V)
Fig. 6. Output characteristics: drain current as a
Fig. 7. Subthreshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
800
RDSon
(mΩ)
600
2.6 V 2.8 V
aaa-005463
3V
3.2 V
1000
RDSon
(mΩ)
800
aaa-005464
600
400
Tj = 150 °C
400
200
0
0
3.5 V
4.5 V
VGS = 10 V
1
2
3
4
Tj = 25 °C
5
6
7
ID (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
200
Tj = 25 °C
0
0
2
4
6
8
10
VGS (V)
ID = 1.5 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMT200EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 October 2012
© NXP B.V. 2012. All rights reserved
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