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SST25VF020B-80-4I-SAE View Datasheet(PDF) - Silicon Storage Technology

Part Name
Description
Manufacturer
SST25VF020B-80-4I-SAE
SST
Silicon Storage Technology SST
SST25VF020B-80-4I-SAE Datasheet PDF : 33 Pages
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Data Sheet
Write-Status-Register (WRSR)
The Write-Status-Register instruction writes new values to
the BP1, BP0, and BPL bits of the status register. CE#
must be driven low before the command sequence of the
WRSR instruction is entered and driven high before the
WRSR instruction is executed. See Figure 20 for EWSR or
WREN and WRSR for byte-data input sequences.
Executing the Write-Status-Register instruction will be
ignored when WP# is low and BPL bit is set to “1”. When
the WP# is low, the BPL bit can only be set from “0” to “1” to
lock-down the status register, but cannot be reset from “1”
to “0”. When WP# is high, the lock-down function of the
2 Mbit SPI Serial Flash
SST25VF020B
BPL bit is disabled and the BPL, BP0, and BP1 bits in the
status register can all be changed. As long as BPL bit is set
to 0 or WP# pin is driven high (VIH) prior to the low-to-high
transition of the CE# pin at the end of the WRSR instruc-
tion, the bits in the status register can all be altered by the
WRSR instruction. In this case, a single WRSR instruction
can set the BPL bit to “1” to lock down the status register as
well as altering the BP0, BP1, and BP2 bits at the same
time. See Table 2 for a summary description of WP# and
BPL functions.
CE#
MODE 3 0 1 2 3 4 5 6 7
MODE 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK MODE 0
MODE 0
SI
50 or 06
MSB
SO
01
MSB
HIGH IMPEDANCE
STATUS
REGISTER IN
76543210
MSB
1417 EWSR.0
FIGURE 20: Enable-Write-Status-Register (EWSR) or
Write-Enable (WREN) and Write-Status-Register (WRSR) Byte-Data Input Sequence
The Write-Status-Register instruction also writes new val-
ues to the Status Register 1. To write values to Status
Register 1, the WRSR sequence needs a word-data
input—the first byte being the Status Register bits, followed
by the second byte Status Register 1 bits. CE# must be
driven low before the command sequence of the WRSR
instruction is entered and driven high before the WRSR
instruction is executed. See Figure 21 for EWSR or WREN
and WRSR instruction word-data input sequences.
Executing the Write-Status-Register instruction will be
ignored when WP# is low and BPL bit is set to ‘1’. When
the WP# is low, the BPL bit can only be set from ‘0’ to ‘1’ to
lock-down the status registers, but cannot be reset from ‘1’
to ‘0’. When WP# is high, the lock-down function of the BPL
bit is disabled and the BPL, BP0, BP1, TSP, and BSP bits
in the status register can all be changed. As long as BPL bit
is set to 0 or WP# pin is driven high (VIH) prior to the low-to-
high transition of the CE# pin at the end of the WRSR
instruction, the bits in the status register can all be altered
by the WRSR instruction. In this case, a single WRSR
instruction can set the BPL bit to “1” to lock down the status
register as well as altering the BPL, BP0, BP1, TSP, and
BSP bits at the same time. See Table 2 for a summary
description of WP# and BPL functions.
©2010 Silicon Storage Technology, Inc.
20
S71417-02-000
04/10

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