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SST25VF040B View Datasheet(PDF) - Silicon Storage Technology

Part Name
Description
Manufacturer
SST25VF040B
SST
Silicon Storage Technology SST
SST25VF040B Datasheet PDF : 33 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
Data Sheet
ELECTRICAL SPECIFICATIONS
4 Mbit SPI Serial Flash
SST25VF040B
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temp
0°C to +70°C
-40°C to +85°C
VDD
2.7-3.6V
2.7-3.6V
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF
See Figures 26 and 27
TABLE 8: DC Operating Characteristics (25VF040B-50-xx-xxxF)
Limits
Symbol
IDDR
IDDR2
IDDW
ISB
ILI
ILO
VIL
VIH
VOL
VOL2
VOH
Parameter
Read Current
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Output High Voltage
Min
0.7 VDD
VDD-0.2
Max
10
15
30
20
1
1
0.8
0.2
0.4
Units
mA
mA
mA
µA
µA
µA
V
V
V
V
V
Test Conditions
CE#=0.1 VDD/0.9 VDD@25 MHz, SO=open
CE#=0.1 VDD/0.9 VDD@50 MHz, SO=open
CE#=VDD
CE#=VDD, VIN=VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VDD=VDD Max
IOL=100 µA, VDD=VDD Min
IOL=1.6 mA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
T8.0 1295
©2009 Silicon Storage Technology, Inc.
22
S71295-05-000
10/09

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