SST25VF040B View Datasheet(PDF) - Silicon Storage Technology
Part Name
Description
Manufacturer
SST25VF040B Datasheet PDF : 33 Pages
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4 Mbit SPI Serial Flash
SST25VF040B
Data Sheet
TABLE 9: DC Operating Characteristics (25VF040B-80-xx-xxxE)
Limits
Symbol
IDDR
IDDR3
IDDW
ISB
ILI
ILO
VIL
VIH
VOL
VOL2
VOH
Parameter
Read Current
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Output High Voltage
Min
0.7 VDD
VDD-0.2
Max
12
20
30
20
1
1
0.8
0.2
0.4
Units
mA
mA
mA
µA
µA
µA
V
V
V
V
V
Test Conditions
CE#=0.1 VDD/0.9 VDD@33 MHz, SO=open
CE#=0.1 VDD/0.9 VDD@80 MHz, SO=open
CE#=VDD
CE#=VDD, VIN=VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VDD=VDD Max
IOL=100 µA, VDD=VDD Min
IOL=1.6 mA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
T9.0 1295
TABLE 10: Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
TPU-READ1
VDD Min to Read Operation
10
µs
TPU-WRITE1
VDD Min to Write Operation
10
µs
T10.0 1295
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
COUT1
CIN1
Output Pin Capacitance
Input Capacitance
VOUT = 0V
VIN = 0V
12 pF
6 pF
T11.0 1295
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: Reliability Characteristics
Symbol
Parameter
Minimum Specification Units Test Method
NEND1
Endurance
10,000
Cycles JEDEC Standard A117
TDR1
Data Retention
100
Years JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA JEDEC Standard 78
T12.0 1295
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2009 Silicon Storage Technology, Inc.
23
S71295-05-000
10/09
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