VN610SP-E(2013) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

VN610SP-E
(Rev.:2013)

Single channel high-side driver

STMicroelectronics 

VN610SP-E

3

Application information

Application information

Figure 19. Application schematic

+5V

Rprot

INPUT

VCC

μC

Rprot

CURRENT SENSE

Dld

OUTPUT

RSENSE

GND

RGND

VGND

DGND

3.1

3.1.1

GND protection network against reverse battery

This section provides two solutions for implementing a ground protection network against

reverse battery.

Solution 1: a resistor in the ground line (RGND only)

This can be used with any type of load.

The following show how to dimension the RGND resistor:

1. RGND ≤ 600mV / (IS(on)max)

2. RGND ≥ ( - VCC) / (- IGND)

where - IGND is the DC reverse ground pin current and can be found in the absolute

maximum rating section of the device datasheet.

Power dissipation in RGND (when VCC < 0 during reverse battery situations) is:

PD = (- VCC)2/ RGND

This resistor can be shared amongst several different HSDs. Please note that the value of

this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the

maximum on-state currents of the different devices.

Please note that, if the microprocessor ground is not shared by the device ground, then the

RGND produces a shift (IS(on)max * RGND) in the input thresholds and the status output

values. This shift varies depending on how many devices are ON in the case of several high-

side drivers sharing the same RGND.

Doc ID 10889 Rev 5

17/27

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