BPW36 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
BPW36 Datasheet PDF : 4 Pages
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BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
0.030 (0.76)
NOM
0.255 (6.48)
0.50 (12.7)
MIN
Base
Emitter
0.040 (1.02)
0.040 (1.02)
45°
0.020 (0.51) 3X
0.100 (2.54)
0.050 (1.27)
Collector
(Case)
Ø0.100 (2.54)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
FEATURES
• Hermetically sealed package
• Narrow reception angle
• European “Pro Electron” registered
DESCRIPTION
• The BPW36/37 are silicon phototransistors
mounted in narrow angle TO-18 packages.
SCHEMATIC
C
B
E
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of
940 nm.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCEO
VCBO
VEBO
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
45
45
5
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
2001 Fairchild Semiconductor Corporation
DS300279 3/13/01
1 OF 4
www.fairchildsemi.com
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