F25L004A View Datasheet(PDF) - [Elite Semiconductor Memory Technology Inc.
Part Name
Description
Manufacturer
F25L004A Datasheet PDF : 30 Pages
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ESMT
F25L004A
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current(Note1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Note :
1. Output shorted for no more than one second. No more than one output shorted at a time.
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..< 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . CL = 15 pF for ≧75MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CL = 30 pF for ≦50MHz
See Figures 23 and 24
OPERATING RANGE
Parameter
Operating Supply Voltage
Ambient Operating Temperature
Symbol
VDD (for FCLK ≦ 75MHz)
VDD (for FCLK = 100MHz)
TA
Value
2.7~3.6
3.0~3.6
0~70
Unit
V
°C
TABLE 6: DC OPERATING CHARACTERISTICS
Symbol
IDDR
Parameter
Read Current
Limits
Min Max
15
IDDW
Program and Erase Current
40
ISB
Standby Current
ILI
Input Leakage Current
ILO
Output Leakage Current
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
75
1
1
0.8
0.7 VDD
0.2
VDD-0.2
Units
mA
mA
µA
µA
µA
V
V
V
V
Test Conditions
CE =0.1 VDD/0.9 VDD@33 MHz, SO=open
CE =VDD
CE =VDD, VIN=VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VDD=VDD Max
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
TABLE 7 : RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
TPU-READ1
TPU-WRITE1
VDD Min to Read Operation
VDD Min to Write Operation
Parameter
Minimum
10
10
Units
µs
µs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.6
20/30
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