FSEZ2016NY(2009) View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

FSEZ2016NY
(Rev.:2009)

Low-Power Green-Mode EZSWITCH™ without Secondary Side Feedback Circuitry

Fairchild Semiconductor 

Electrical Characteristics (Continued)

Unless otherwise noted, VDD=15V and TA=25°C.

Symbol

Parameter

Oscillator Section

Center Frequency

fOSC

Frequency

Hopping Range

tHOP

fOSC-G

VFB-N

Hopping Period

Green Mode Frequency

Green Mode Entry FB Voltage

VFB-G Green Mode Ending FB Voltage

VFB-Z

SG

fDV

fDT

Zero Duty Cycle FB Voltage

Green Mode Modulation Slope

Frequency Variation vs. VDD Deviation

Frequency Variation vs. Temperature

Deviation

Internal MOSFET Section

DCYMAX

BVDSS

Maximum Duty Cycle

Drain-Source Breakdown Voltage

ΔBVDSS/ΔTJ

Breakdown Voltage Temperature

Coefficient

IS

Maximum Continuous Drain-Source

Diode Forward Current

ISM

Maximum Pulsed Drain-Source Diode

Forward Current

RDS(ON) Static Drain-Source On-Resistance

IDSS

Drain-Source Leakage Current

tD-ON

Turn-on Delay Time

tr

tD-OFF

tf

Rise Time

Turn-off Delay Time

Fall Time

CISS

Input Capacitance

COSS

Output Capacitance

Over Temperature Protection (OTP)

TOTP

Protection Junction Temperature

TOTP-RESTART Restart Junction Temperature

Conditions

VDD=10 to 22V

TA= -20 to 85°C

ID=250μA, VGS=0V

ID=250μA,

Referenced to 25°C

ID=0.5A, VGS=10V

VDS=600V, VGS=0V,

TC=25°C

VDS=480V, VGS=0V,

TC=100°C

VDS=300V, ID=1.1A,

RG=25Ω

VGS=0V, VDS=25V,

fS=1MHz

Min.

60

±4.1

14.5

2.3

40

69

600

Typ. Max. Units

65

±4.7

4

17.0

2.6

VFB-N -

0.75

1.4

70

1.5

70

±5.3

19.5

2.9

100

5

5.0

kHz

ms

KHz

V

V

V

Hz/mV

%

%

74

79

%

V

0.6

V/°C

1

A

4

A

9.3

11.5

Ω

5

μA

10

μA

7

24

ns

21

52

ns

13

36

ns

27

64

ns

130

170

pF

19

25

pF

140

°C

110

°C

© 2008 Fairchild Semiconductor Corporation

FSEZ2016 Rev. 1.0.0

6

www.fairchildsemi.com

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