HYB3164160T-50 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

HYB3164160T-50

4M x 16-Bit Dynamic RAM (4k & 8k Refresh)

Siemens AG 

HYB 3164(5)160T-50/-60

4M x 16-DRAM

DC Characteristics (cont’d)

TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, (values in brackets for HYB 3165160T)

Parameter

Symbol Limit Values Unit Note

min. max.

Average Vcc supply current, during RAS-only

ICC3

refresh cycles:

-50 ns version

–

-60 ns version

–

(RAS cycling: CAS = VIH: tRC = tRC min.)

110 (140) mA 2) 4)

100 (120) mA

Average Vcc supply current,

ICC4

during fast page mode:

-50 ns version

–

-60 ns version

–

(RAS = VIL, CAS, address cycling: tPC=tPC min.)

Standby Vcc supply current

(RAS=CAS= Vcc-0.2V)

ICC5

–

85 (85) mA 2) 3) 4)

75 (75) mA

200

A–

Average Vcc supply current, during CAS-before- ICC6

RAS refresh mode:

-50 ns version

–

-60 ns version

–

(RAS, CAS cycling: tRC = tRC min.)

110 (140) mA 2) 4)

100 (120) mA

Self Refresh Current

ICC7

–

400

A

Average Power Supply Current during Self Refresh.

(CBR cycle with tRAS>TRASSmin, CAS held low,

WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)

Capacitance

TA = 0 to 70 ˚C,VCC = 3.3 V ± 0.3V, f = 1 MHz

Parameter

Symbol

Limit Values

Unit

min.

max.

Input capacitance (A0 to A11,A12)

CI1

–

5

pF

Input capacitance (RAS, CAS, WRITE, OE)

CI2

–

7

pF

I/O capacitance (I/O1-I/O16)

CIO

–

7

pF

Semiconductor Group

12

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