SIHFP23N50L-E3(2011) View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

SIHFP23N50L-E3
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

IRFP23N50L, SiHFP23N50L

Vishay Siliconix

100.00

10.00

TJ = 150 °C

1.00

TJ = 25 °C

VGS = 0 V

0.10

0.0

0.5

1.0

1.5

2.0

VSD, Source-to-Drain Voltage (V)

Fig. 9 - Typical Source-Drain Diode Forward Voltage

25

20

15

10

5

0

25

50

75

100

125

150

TC, Case Temperature

(°C)

Fig. 10 - Maximum Drain Current vs. Case Temperature

10

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 11a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 11b - Switching Time Waveforms

1

D = 0.50

0.1

0.20

0.10

0.05

0.02

0.01

0.01

0.001

0.00001

SINGLE PULSE

(THERMAL RESPONSE)

0.0001

0.001

PDM

t1

t2

Notes:

1. Duty factor D =

t1 / t2

2. PeakT J = P DM x Z thJC + T C

0.01

0.1

1

t1, Rectangular Pulse Duration (sec)

Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91209

S11-0445-Rev. B, 21-Mar-11

www.vishay.com

5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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