IRFP23N50L, SiHFP23N50L
Vishay Siliconix
5.0
4.5
4.0
3.5
ID = 250 µA
3.0
2.5
2.0
1.5
1.0
- 75 - 50 - 25 0
25 50 75 100 125 150
TJ, Temperature (°C)
Fig. 13 - Threshold Voltage vs. Temperature
750
ID
TOP
10A
15A
600
BOTTOM 23A
450
300
150
0
25
50
75
100
125
Starting T , Junction Temperature
150
(°C)
Fig. 14 - Maximum Avalanche Energy s. Drain Current
15 V
VDS
L
Driver
RG
20 V
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig. 15a - Unclamped Inductive Test Circuit
VDS
tp
IAS
Fig. 15b - Unclamped Inductive Waveforms
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 16a - Gate Charge Test Circuit
10 V
QGS
VG
QG
QGD
Charge
Fig. 16b - Basic Gate Charge Waveform
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Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000