Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
Preliminary specification
PEMH10
103
handbook, halfpage
hFE
102
MHC045
(1)
(2)
(3)
10
110−1
1
10
102
IC (mA)
VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
103
handbook, halfpage
VCEsat
(mV)
MHC046
102
(1)
(2)
(3)
10
10−1
1
10
102
IC (mA)
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
10
handbook, halfpage
Vi(off)
(V)
1
(1)
(2)
(3)
MHC047
10−110−2
10−1
1 IC (mA) 10
VCE = 5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
102
handbook, halfpage
Vi(on)
(V)
10
MHC048
1
(1)
(2)
(3)
10−1
10−1
1
10
102
IC (mA)
VCE = 0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
2001 Oct 22
5