PEMD2(2008) View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMD2 Datasheet PDF : 16 Pages
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NXP Semiconductors
PEMD2; PIMD2; PUMD2
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
-
-
ICEO
collector-emitter
VCE = 30 V; IB = 0 A
cut-off current
VCE = 30 V; IB = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
-
-
-
-
-
-
hFE
DC current gain
VCE = 5 V; IC = 5 mA
60
-
VCEsat collector-emitter
IC = 10 mA; IB = 0.5 mA
-
-
saturation voltage
VI(off)
off-state input
voltage
VCE = 5 V; IC = 100 µA
-
1.1
VI(on)
on-state input
voltage
VCE = 0.3 V; IC = 5 mA
2.5 1.7
R1
bias resistor 1 (input)
15.4 22
R2/R1 bias resistor ratio
0.8 1
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
TR1 (NPN)
-
-
TR2 (PNP)
-
-
Max Unit
100 nA
1
µA
50
µA
180 µA
-
150 mV
0.8 V
-
V
28.6 kΩ
1.2
2.5 pF
3
pF
PEMD2_PIMD2_PUMD2_7
Product data sheet
Rev. 07 — 24 September 2008
© NXP B.V. 2008. All rights reserved.
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