IRFZ44N View Datasheet(PDF) - Suntac Electronic
Part Name
Description
Manufacturer
IRFZ44N Datasheet PDF : 5 Pages
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ORDERING INFORMATION
Part Number
Package
....................IRFZ44N................................................TO-220
IRFZ44N
N-CHANNEL Power MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
Characteristic
Symbol
OFF Characteristics
cIRFZ44N
Min
Typ
Max
Drain-to-Source Breakdown Voltage
(VGS = 0 V, ID = 250 µA)
VDSS
Breakdown Voltage Temperature Coefficient
(Reference to 25к, ID = 1mA)
ӔVDSS/ǻTJ
Drain-to-Source Leakage Current
IDSS
(VDS = 55 V, VGS = 0 V, TJ = 25к)
(VDS = 44 V, VGS = 0 V, TJ = 150к)
Gate-to-Source Forward Leakage
IGSS
(VGS = 20 V)
Gate-to-Source Reverse Leakage
IGSS
(VGS = -20 V)
ON Characteristics
Gate Threshold Voltage
(VDS = VGS, ID = 250 µA)
VGS(th)
Static Drain-to-Source On-Resistance (Note 4)
(VGS = 10 V, ID = 25A)
RDS(on)
Forward Transconductance (VDS = 25 V, ID = 25A) (Note 4)
gFS
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Ciss
Coss
Crss
Total Gate Charge
Gate-to-Source Charge
(VDS = 44 V, ID = 25 A,
Qg
VGS = 10 V) (Note 2)
Qgs
Gate-to-Drain (“Miller”) Charge
Qgd
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 28 V, ID = 25 A,
VGS = 10 V,
RG = 12ȍ) (Note 4)
td(on)
trise
td(off)
tfall
Source-Drain Diode Characteristics
Continuous Source Current
(Body Diode)
IS
Integral pn-diode in MOSFET
Pulse Source Current (Body Diode)
(Note 1)
ISM
Diode Forward On-Voltage
(IS = 25A, VGS = 0 V) (Note 4)
VSD
Reverse Recovery Time
Reverse Recovery Charge
(IF = 25A, VGS = 0 V,
trr
di/dt = 100A/µs) (Note 4)
Qrr
55
0.058
25
250
100
-100
2.0
...4.0
17.5
19
1470
360
88
.63
14
23
.12
60
.................44
.................45
...............50
...............160
...............1.3
63...............95.
170..............260
Notes:
Q Repetitive rating; pulse width limited by
S ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. (See fig. 1)
TJ ≤ 175°C
R Essentially independent of operating temerpature T Pulse width ≤ 400µs; duty cycle ≤ 2%.
U
V
Units
... V
.V/к
µA
nA
nA
V
mȍ
S
pF
pF
pF
.nC
nC
nC
.. ns
ns
ns
ns
A
A
V
ns
nC
Page 2
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