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Part Name
Description
BFW12 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BFW12
N-CHANNEL SILICON FETs
New Jersey Semiconductor
BFW12 Datasheet PDF : 3 Pages
1
2
3
BFW12
BFW13
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Drain-gate voltage (open source)
Gate-source voltage (open drain)
*^DS
VDGO
"^GSO
max.
max.
max.
30 V
30 V
30 V
Drain current
Gate current
Irj
max, 10 mA
IQ
max. 5 mA
Total power dissipation up to T
amb
= 86 °C
P
tot
max. ISO mW
Storage temperature range
Junction temperature
THERMAL RESISTANCE
From junction to ambient
T
stg
Tj
"65 to + 1 75 °C
max. 175 °C
R^ j_
a
=
590 K/W
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