PEMD3 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PEMD3 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
Product specification
PEMD3
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per transistor; for the PNP transistor with negative polarity
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
RR-----21--
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
saturation voltage
input off voltage
input on voltage
TR1 (NPN)
TR2 (PNP)
input resistor
resistor ratio
VCB = 50 V; IE = 0
VCE = 50 V; IB = 0
VCE = 30 V; IB = 0; Tj = 150 °C
VEB = 5 V; IC = 0
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
VCE = 5 V; IC = 100 µA
VCE = 0.3 V; IC = 10 mA
Cc
collector capacitance
TR1 (NPN)
TR2 (PNP)
IE = ie = 0; VCB = 10 V;
f = 1 MHz
MIN. TYP. MAX. UNIT
−
−
100 nA
−
−
1
µA
−
−
50
µA
−
−
400 µA
30
−
−
−
−
150 mV
−
1.1 0.8 V
2.5 1.1 −
V
2.5 1.8 −
V
7
10
13
kΩ
0.8 1
1.2
−
−
2.5 pF
−
−
3
pF
2001 Nov 07
4
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