BTS780GP View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BTS780GP

TrilithIC

Infineon Technologies 

BTS 780 GP

4.4 Electrical Characteristics (cont’d)

ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V

unless otherwise specified

Parameter

Symbol Limit Values Unit Test Condition

min. typ. max.

High-Side-Switches 1, 2

Static drain-source

on-resistance

RDS ON H –

Static drain-source

on-resistance

RDS ON H –

Leakage current

IHSLK

–

Body-diode forward-voltage VFH

–

@ IFH = 2 A

VFH

–

VFH

–

Clamp-diode leakage-

current (IFH + ISH)

ILKCL

–

34 40 mΩ ISH = 2 A

Tj = 25 °C

–

75 mΩ ISH = 2 A

–

10 µA VGH = VSH = 0 V

0.8 1.2 V Tj = – 40 °C

0.7 1.1 V Tj = 25 °C

0.5 0.8 V Tj = 150 °C

–

10 mA IFH = 2 A

Short Circuit to GND

Initial peak SC current

Initial peak SC current

Initial peak SC current

Initial peak SC current

ISCP

47 55 66 A Tj = – 40 °C

ISCP

35 44 54 A Tj = 25 °C

ISCP

29 36 45 A Tj = 85 °C

ISCP

21 27 34 A Tj = 150 °C

Short Circuit to VS

OFF-state examiner-

voltage

VEO

2

3

4

V

VGH = 0 V

Output pull-down-resistor RO

4

10 30 kΩ –

Open Circuit

Detection current

IOCD

0.05 –

1.2 A –

Data Sheet

12

1999-06-22

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