BTS780GP View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BTS780GP

TrilithIC

Infineon Technologies 

BTS 780 GP

4.4 Electrical Characteristics (cont’d)

ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V

unless otherwise specified

Parameter

Symbol Limit Values Unit Test Condition

min. typ. max.

Switching Times

Switch-ON-time;

to 90% VSH

Switch-OFF-time;

to 10% VSH

tON

–

130 300 µs 12 Ω resistive load

VS = 13.2 V

tOFF

–

260 450 µs 12 Ω resistive load

VS = 13.2 V

Control Inputs GH 1, 2

H-input voltage threshold VGHH –

2.8 3.3 V –

L-input voltage threshold VGHL 1.5 2.3 –

V–

Input voltage hysteresis

VGHHY –

0.5 –

V–

H-input current

IGHH

20 50 90 µA VGH = 5 V

L-input current

IGHL

4

25 50 µA VGH = 0.4 V

Input series resistance

RI

2.5 4.2 6

kΩ –

Zener limit voltage

VGHZ

5.4 6.1 –

V

IGH = 1.6 mA

Low-Side-Switches 1, 2

Static drain-source

on-resistance

RDS ON L –

Static drain-source

on-resistance

Leakage current

RDS ON L –

ILKL

–

Body-diode forward-voltage VFL

–

@ IFL = 2 A

VFL

–

VFL

–

15 20 mΩ ISL = 2 A

VGL = 5 V

Tj = 25 °C

–

35 mΩ ISH = 2 A

< 1 100 µA VGL = 0 V

VDS = 18 V

0.8 1.2 V Tj = – 40 °C

0.7 1.1 V Tj = 25 °C

0.5 0.8 V Tj = 150 °C

Data Sheet

13

1999-06-22

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