2SJ483 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SJ483

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ483

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

VDSS

VGSS

ID

I Note1

D(pulse)

I DR

Pch

Channel temperature

Tch

Storage temperature

Tstg

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

Ratings

Unit

–30

V

±20

V

–5

A

–20

A

–5

A

0.9

W

150

°C

–55 to +150

°C

2

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