KL27P64M48SF6 View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

Manufacturer

KL27P64M48SF6

Kinetis KL27 With Up To 256 KB Flash

Freescale Semiconductor 

Peripheral operating requirements and behaviors

Table 22. Flash command timing specifications (continued)

Symbol Description

tersall

tvfykey

tersallu

Erase All Blocks execution time

Verify Backdoor Access Key execution time

Erase All Blocks Unsecure execution time

Min.

Typ.

Max.

Unit

—

175

1300

ms

—

—

30

μs

—

175

1300

ms

1. Assumes 25 MHz flash clock frequency.

2. Maximum times for erase parameters based on expectations at cycling end-of-life.

Notes

2

1

2

3.4.1.3 Flash high voltage current behaviors

Table 23. Flash high voltage current behaviors

Symbol Description

Min.

Typ.

Max.

Unit

IDD_PGM Average current adder during high voltage

—

flash programming operation

2.5

6.0

mA

IDD_ERS Average current adder during high voltage

—

flash erase operation

1.5

4.0

mA

3.4.1.4 Reliability specifications

Table 24. NVM reliability specifications

Symbol Description

tnvmretp10k

tnvmretp1k

nnvmcycp

Data retention after up to 10 K cycles

Data retention after up to 1 K cycles

Cycling endurance

Min.

Program Flash

5

20

10 K

Typ.1

50

100

50 K

Max.

—

—

—

Unit

years

years

cycles

Notes

—

—

2

1. Typical data retention values are based on measured response accelerated at high temperature and derated to a

constant 25 °C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in

Engineering Bulletin EB619.

2. Cycling endurance represents number of program/erase cycles at -40 °C ≤ Tj ≤ 125 °C.

3.5 Security and integrity modules

There are no specifications necessary for the device's security and integrity modules.

3.6 Analog

28

Freescale Semiconductor, Inc.

Kinetis KL27 With Up To 256 KB Flash, Rev3, 08/2014.

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