BTA416Y(2007) View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

BTA416Y
(Rev.:2007)

16 A Three-quadrant triacs, insulated, high commutation, high temperature

NXP Semiconductors. 

NXP Semiconductors

BTA416Y series B and C

16 A 3-quadrant triacs, insulated, high commutation, high temperature

3. Ordering information

Table 2. Ordering information

Type number

Package

Name

Description

Version

BTA416Y-600B

BTA416Y-600C

TO-220

plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT78D

3-lead TO-220

BTA416Y-800B

BTA416Y-800C

4. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDRM

repetitive peak off-state voltage

BTA416Y-600B; BTA416Y-600C

BTA416Y-800B; BTA416Y-800C

IT(RMS)

RMS on-state current

full sine wave; Tmb ≤ 108 °C; see

Figure 4 and 5

ITSM

non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to

surge; see Figure 2 and 3

t = 20 ms

t = 16.7 ms

I2t

I2t for fusing

t = 10 ms

dIT/dt

IGM

PGM

PG(AV)

Tstg

Tj

rate of rise of on-state current

peak gate current

peak gate power

average gate power

storage temperature

junction temperature

ITM = 20 A; IG = 0.2 A;

dIG/dt = 0.2 A/µs

over any 20 ms period

Min

[1] -

-

-

-

-

-

-

-

-

-

−40

-

Max Unit

600

V

800

V

16

A

160

A

176

A

128

A2s

100

A/µs

2

A

5

W

0.5

W

+150 °C

150

°C

[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The

rate of rise of current should not exceed 15 A/µs.

BTA416Y_SER_B_C_1

Product data sheet

Rev. 01 — 3 October 2007

© NXP B.V. 2007. All rights reserved.

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