FGH40N60SMDF View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FGH40N60SMDF Datasheet PDF : 9 Pages
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April 2013
FGH40N60SMDF
600 V, 40 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = 175°C
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9V(Typ.) @ IC = 40 A
• High Input Impedance
• Fast Switching: EOFF = 6.5 uJ/A
• Tightened Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of field stop 2nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are
essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600
20
80
40
120
349
174
-55 to +175
-55 to +175
300
Typ.
-
-
-
Max.
0.43
1.45
40
Unit
V
V
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
1
FGH40N60SMDF Rev. C0
www.fairchildsemi.com
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