FGH40N60SMDF View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FGH40N60SMDF Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking
Device
FGH40N60SMDF FGH40N60SMDF
Package
TO-247
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250A
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250A, VCE = VGE
IC = 40A, VGE = 15V
IC = 40A, VGE = 15V,
TC = 150oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 40A,
RG = 6, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 40A,
RG = 6, VGE = 15V,
Inductive Load, TC = 150oC
VCE = 400V, IC = 40A,
VGE = 15V
600
-
-
V
-
0.6
-
V/oC
-
-
250
A
-
-
±400
nA
3.5
4.6
6.0
V
-
1.9
2.5
V
-
2.1
-
V
-
1880
-
pF
-
180
-
pF
-
50
-
pF
-
12
-
ns
-
20
-
ns
-
92
-
ns
-
13
20
ns
-
1.3
-
mJ
-
0.26
-
mJ
-
1.56
-
mJ
-
12
-
ns
-
19
-
ns
-
97
-
ns
-
14
21
ns
-
2.09
-
mJ
-
0.44
-
mJ
-
2.53
-
mJ
-
119
-
nC
-
13
-
nC
-
58
-
nC
©2010 Fairchild Semiconductor Corporation
2
FGH40N60SMDF Rev. C0
www.fairchildsemi.com
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