FMBL1G300US60 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FMBL1G300US60 Datasheet PDF : 9 Pages
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Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 0V, IC = 200mA
IC = 300A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 300 V, IC = 300A,
RG = 1.5Ω, VGE = 15V
Inductive Load, TC = 25°C
VCC = 300 V, IC = 300A,
RG = 1.5Ω, VGE = 15V
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC = 300A,
VGE = 15V
Min. Typ. Max. Units
600
--
--
V
--
0.6
--
V/°C
--
--
250
uA
--
-- ± 100 nA
5.0
--
8.5
V
--
2.2
2.8
V
-- 14600 --
pF
--
2170
--
pF
--
500
--
pF
--
170
--
ns
--
110
--
ns
--
240 300
ns
--
100 200
ns
--
4.2
--
mJ
--
13.3
--
mJ
--
17.5
--
mJ
--
290
--
ns
--
140
--
ns
--
285
--
ns
--
165
--
ns
--
6.0
--
mJ
--
16.5
--
mJ
--
22.5
--
mJ
10
--
--
us
--
1260 1400 nC
--
250
--
nC
--
565
--
nC
©2001 Fairchild Semiconductor Corporation
FMBL1G300US60 Rev. A
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