FQP65N06 View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.
Part Name
Description
Manufacturer
FQP65N06 Datasheet PDF : 6 Pages
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FQP65N06
®
Typical Characteristics
Top : 15.V0GVS
10.0 V
102
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
30
25
VGS = 10V
20
VGS = 20V
15
10
5
※ Note : TJ = 25℃
0
0
50
100
150
200
250
300
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5000
4000
3000
2000
1000
C
oss
C
iss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
175℃
25℃
100
2
-55℃
※ Notes :
1. V = 25V
2. 25DS0μ s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
102
101
100
0.2
175℃
25℃
※ Notes :
1.
2.
V25GS0μ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 30V
VDS = 48V
8
6
4
2
※ Note : ID = 65A
0
0
10
20
30
40
50
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 3/6
http://www.thinkisemi.com/
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