M2V56S20AKT-5 View Datasheet(PDF) - MITSUBISHI ELECTRIC

Part Name

Description

Manufacturer

M2V56S20AKT-5

256M Synchronous DRAM

MITSUBISHI ELECTRIC  

SDRAM (Rev.1.31)

Single Data Rate

Apr. '02

ABSOLUTE MAXIMUM RATINGS

MITSUBISHI LSIs

M2V56S20/ 30/ 40 ATP

M2V56S20/ 30/ 40 AKT

256M Synchronous DRAM

Symbol

Parameter

Conditions

Ratings

Unit

Vdd

Supply Voltage

with respect to Vss

-0.5 ~ 4.6

V

VddQ

Supply Voltage for Output with respect to VssQ

-0.5 ~ 4.6

V

VI

Input Voltage

with respect to Vss -0.5 ~ Vdd+0.5 V

VO

IO

Pd

Topr

Tstg

Output Voltage

Output Current

Power Dissipation

Operating Temperature

Storage Temperature

with respect to VssQ -0.5 ~ Vdd+0.5 V

Ta=25'C

50

mA

1000

mW

0~ 70

'C

-65~ 150

'C

RECOMMENDED OPERATING CONDITIONS

(Ta=0 ~ 70'C, unless otherwise noted)

Symbol

Parameter

Min.

Vdd

Supply Voltage

3.0

Vss

Supply Voltage

0

VddQ

Supply Voltage for Output

3.0

VssQ

Supply Voltage for Output

0

VIH

High-Level Input Voltage all inputs

2.0

VIL

Low-Level Input Voltage all inputs

-0.3

Limits

Unit

Typ. Max.

3.3

3.6

V

0

0

V

3.3

3.6

V

0

0

V

Vdd+0.3 V

0.8

V

CAPACITANCE

(Ta=0 ~ 70'C, Vdd = VddQ = 3.3+0.3V, Vss = VssQ = 0V, unless otherwise noted)

Symbol

Parameter

Test Condition

Limits

Unit

Min. Max.

CI(A) Input Capacitance,address pin

2.5 3.8 pF

CI(C)

CI(K)

CI/O

Input Capacitance,control pin

Input Capacitance,CLK pin

Input Capacitance,I/O pin

VI=1.4V

f=1MHz

VI=25mVrms

2.5 3.8 pF

2.5 3.5 pF

4.0 6.5 pF

MITSUBISHI ELECTRIC

31

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