ILX511 View Datasheet(PDF) - Sony Semiconductor

Part Name

Description

Manufacturer

ILX511

2048-pixel CCD Linear Image Sensor (B/W)

Sony Semiconductor 

ILX511

Electro-optical Characteristics

(Ta = 25 °C, VDD = 5 V, Clock frequency: 1 MHz, Light source = 3200 K, IR cut filter: CM-500S (t = 1.0 mm),

Without S/H mode)

Item

Symbol

Min.

Typ.

Max.

Unit

Remarks

Sensitivity 1

R1

150

200

250

V/(lx • s) Note 1

Sensitivity 2

R2

—

1800

—

V/(lx • s) Note 2

Sensitivity nonuniformity

PRNU

—

5.0

10.0

%

Note 3

Saturation output voltage

VSAT

0.6

0.8

—

V

—

Dark voltage average

VDRK

—

3.0

6.0

mV

Note 4

Dark signal nonuniformity

DSNU

—

6.0

12.0

mV

Note 4

Image lag

IL

—

1

—

%

Note 5

Dynamic range

DR

—

267

—

—

Note 6

Saturation exposure

SE

—

0.004

—

lx • s

Note 7

5 V current consumption

I VDD

—

5.0

10.0

mA

—

Total transfer efficiency

TTE

92.0

98.0

—

%

—

Output impedance

ZO

—

250

—

Ω

—

Offset level

VOS

—

2.8

—

V

Note 8

Note)

1. For the sensitivity test light is applied with a uniform intensity of illumination.

2. Light source: LED λ = 660nm

3. PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 1.

(VMAX-VMIN)/2

PRNU =

× 100 (%)

VAVE

The maximum output of all the valid pixels is set to VMAX, the minimum output to VMIN and the average

output to VAVE.

4. Integration time is 10ms.

5. Typical value is used for clock pulse and readout pulse. VOUT = 500 mV.

6. DR = VSAT/VDRK. When optical integration time is shorter, the dynamic range sets wider because dark

voltage is in proportion to optical integration time.

7. SE = VSAT/R1

8. Vos is defined as indicated below.

D30

D31

D32

S1

VOUT

Vos

GND

—3—

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