RC5042 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
RC5042 Datasheet PDF : 20 Pages
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RC5042
Design Considerations and
Component Selection
MOSFET Selection
This application requires N-channel Logic Level Enhance-
ment Mode Field Effect Transistors. Desired characteristics
are as follows:
• Low Static Drain-Source On-Resistance,
RDS(on) < 37 mW (lower is better)
• Low gate drive voltage, VGS < 4V
• Power package with low thermal resistance
• Drain current rating of 20A minimum
• Drain-Source voltage > 15V.
PRODUCT SPECIFICATION
The on-resistance (RDS(ON)) is the primary parameter for
MOSFET selection. The on-resistance determines the power
dissipation of the MOSFET and therefore significantly
affects the efficiency of the DC-DC Converter. Table 5 pre-
sents a list of suitable MOSFETs for this application.
Table 5. MOSFET Selection Table
Manufacturer & Model #
Fuji
2SK1388
Siliconix
SI4410DY
National Semiconductor
NDP706AL
NDP706AEL
National Semiconductor
NDP603AL
National Semiconductor
NDP606AL
Motorola
MTB75N03HDL
Int. Rectifier
IRLZ44
Int. Rectifier
IRL3103S
Conditions1
VGS = 4V,
ID = 17.5A
TJ = 25°C
TJ = 125°C
VGS = 4.5V,
ID = 5A
TJ = 25°C
TJ = 125°C
VGS = 5V,
ID = 40A
TJ = 25°C
TJ = 125°C
VGS = 4.5V,
ID = 10A
TJ = 25°C
TJ = 125°C
VGS = 5V,
ID = 24A
TJ = 25°C
TJ = 125°C
VGS = 5V,
ID = 37.5A
TJ = 25°C
TJ = 125°C
VGS = 5V,
ID = 31A
TJ = 25°C
TJ = 125°C
VGS = 4.5V,
ID = 28A
TJ = 25°C
TJ = 125°C
RDS,ON(mW)
Typ. Max.
25
37
37
—
16.5
20
28
34
13
15
20
24
31
40
42
54
22
25
33
40
6
9
9.3
14
—
28
—
46
—
19
31
Package
TO-220
Thermal
Resistance
FJA = 75
SO-8
(SMD)
TO-220
FJA = 50
FJA = 62.5
FJC = 1.5
TO-220
TO-220
TO-263
(D2 PAK)
TO-220
TO-220
FJA = 62.5
FJC = 2.5
FJA = 62.5
FJC = 1.5
FJA = 62.5
FJC = 1.0
FJA = 62.5
FJC = 1.0
FJA = 62.5
FJC = 1.0
Note:
1. RDS(ON) values at TJ=125°C for most devices were extrapolated from the typical operating curves supplied by the
manufacturers and are approximations only. Only National Semiconductor offers maximum values at TJ = 125°C.
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