TS2012EIJT View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TS2012EIJT Datasheet PDF : 32 Pages
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TS2012EI
3
Electrical characteristics
Electrical characteristics
3.1
Electrical characteristics tables
Table 6. VCC = +5 V, GND = 0 V, Vic = 2.5 V, Tamb = 25° C (unless otherwise specified)
Symbol
Parameters and test conditions
Min. Typ. Max. Unit
Supply current
ICC
No input signal, no load, both channels
ISTBY
Voo
Standby current
No input signal, VSTBY = GND
Output offset voltage
Floating inputs, G = 6 dB, RL = 8
Output power
THD + N = 1% max, f = 1 kHz, RL = 4
Po
THD + N = 1% max, f = 1 kHz, RL = 8
THD + N = 10% max, f = 1 kHz, RL = 4
THD + N = 10% max, f = 1 kHz, RL = 8
THD + N
Efficiency
PSRR
Crosstalk
CMRR
Total harmonic distortion + noise
Po = 0.8 W, G = 6 dB, f =1 kHz, RL = 8
Efficiency per channel
Po = 1.85 W, RL = 4 + 15 µH
Po = 1.16 W, RL = 8 + 15 µH
Power supply rejection ratio with inputs grounded
Cin = 1 µF (1),f = 217 Hz, RL = 8 Gain = 6 dB
Vripple = 200 mVpp
Channel separation
Po = 0.9 W, G = 6 dB, f =1 kHz, RL = 8
Common mode rejection ratio
Cin = 1 µF, f = 217 Hz, RL = 8 Gain = 6 dB
VICM = 200 mVpp
Gain
Gain value with no load
G1 = G0 = VIL
G1 = VIL and G0 = VIH
G1 = VIH and G0 = VIL
G1 = G0 = VIH
5
7
mA
1
2
µA
25
mV
1.85
1.15
W
2.5
1.6
0.5
%
78
%
88
65
dB
90
dB
63
dB
5.5
6
6.5
11.5
12
12.5
dB
17.5
18
18.5
23.5
24
24.5
Zin
FPWM
Single-ended input impedance
Referred to ground
Gain = 6 dB
Gain = 12 dB
Gain = 18 dB
Gain = 24 dB
Pulse width modulator base frequency
24
30
36
k
24
30
36
12
15
18
6
7.5
9
190 280 370
kHz
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