MMDF3N02HDR2G View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
MMDF3N02HDR2G Datasheet PDF : 7 Pages
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MMDF3N02HDR2G
Dual N-Channel 20-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20
0.025 at VGS = 4.5 V
0.035 at VGS = 2.5 V
ID (A)
7.1
6.0
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
D1
D2
G1
G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current (10 µs Pulse Width)
IDM
Continuous Source Current (Diode Conduction)a
IS
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
20
± 12
7.1
5.7
40
1.7
2
1.3
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol
RthJA
Limit
62.5
Unit
V
A
W
°C
Unit
°C/W
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