MMDF3N02HDR2G View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
MMDF3N02HDR2G Datasheet PDF : 7 Pages
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MMDF3N02HDR2G
www.VBsemi.tw
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 12 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 7.1 A
VGS = 2.5 V, ID = 6.0 A
VDS = 10 V, ID = 7.1 A
IS = 1.7 A, VGS = 0 V
VDS = 10 V, VGS = 4.5 V, ID = 7.1 A
f = 1 MHz
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 4.5 V, Rg = 10 Ω
IF = 1.7 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
0.6
1.5
V
± 100
nA
1
µA
5
20
A
0.019 0.025
Ω
0.026 0.035
27
S
1.2
V
9.5
1.5
nC
2.5
1.6
2.7
Ω
10
15
38
ns
25
26
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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