LH28F008SC View Datasheet(PDF) - Sharp Electronics

Part Name

Description

Manufacturer

LH28F008SC

8M (1M × 8) Flash Memory

Sharp Electronics 

LH28F008SC

8M (1M × 8) Flash Memory

BLOCK ERASE, BYTE WRITE AND LOCK-BIT CONFIGURATION PERFORMANCE3, 4

VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C

SYM.

PARAMETER

VPP = 3.3 V

VPP = 53 V

VPP = 12 V

UNIT NOTE

TYP.1 MIN. MAX. TYP.1 MIN. MAX. TYP.1 MIN. MAX.

ttWEHHQQVV11 Byte Write Time

17 15 TBD 9.3 8.2 TBD 7.6 6.7 TBD µs

2

Block Write Time

1.1 1 TBD 0.6 0.5 TBD 0.5 0.4 TBD sec 2

ttWEHHQQVV22 Block Erase Time

1.8 1.5 TBD 1.2 1 TBD 1.1 0.8 TBD sec 2

ttWEHHQQVV33 Set Lock-Bit Time

21 18 TBD 13.3 11.2 TBD 11.6 9.7 TBD µs

2

ttWEHHQQVV44

Clear Block Lock-Bits

Time

1.8

1.5 TBD 1.2

1 TBD 1.1 0.8 TBD sec

2

ttWEHHRRHH11

Byte Write Suspend

Latency Time to Read

6

7

5

7

5

6 µs

ttWEHHRRHH22

Erase Suspend

Latency Time to Read

16.2

20 9.6

12 9.6

12 µs

VCC = 5 V ± 0.5 V, 5 V ± 0.25 V, TA = 0°C to +70°C

SYM.

PARAMETER

VPP = 53 V

VPP = 12 V

UNIT NOTE

TYP.1 MIN. MAX. TYP.1 MIN. MAX.

ttWEHHQQVV11 Byte Write Time

Block Write Time

8

6.5 TBD 6

4.8 TBD µs

2

0.5 0.4 TBD 0.4 0.3 TBD sec 2

ttWEHHQQVV22 Block Erase Time

1.1 0.9 TBD 1.0 0.3 TBD sec 2

ttWEHHQQVV33 Set Lock-Bit Time

12 9.5 TBD 10 7.8 TBD µs

2

ttWEHHQQVV44 Clear Block Lock-Bits Time

1.1

0.9 TBD 1.0

0.3 TBD sec

2

ttWEHHRRHH11

Byte Write Suspend

Latency Time to Read

5

6

4

5 µs

ttWEHHRRHH22

Erase Suspend Latency

Time to Read

9.6

12 9.6

12 µs

NOTES:

1. Typical values measured at TA = +25°C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to change based

on device characterization.

2. Excludes system-level overhead.

3. These performance numbers are valid for all speed versions.

4. Sampled but not 100% tested.

34

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