SI4190DY-T1-GE3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
SI4190DY-T1-GE3 Datasheet PDF : 9 Pages
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SI4190DY-T1-GE3
www.VBsemi.tw
N-Channel 100-V (D-S) Super Trench Power MOSFET
PRODUCT SUMMARY
VDS (V)
100
RDS(on) () Max.
0.0082 at VGS = 10 V
0.0095 at VGS = 7.5 V
0.0105 at VGS = 6.0 V
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
ID (A)a
15.5
14.8
14.0
Qg (Typ.)
27.9 nC
D
G
FEATURES
• Super Trench technology Power MOSFET
• Excellent gate charge x Rds (on) product(FOM)
• Very low on-resfistance Rds (on)
• 100 % Rg and UIS Tested
APPLICATIONS
• DC/DC Primary Side Switch
• Telecom/Server
• Motor Drive Control
• Synchronous Rectification
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
100
V
VGS
± 20
TC = 25 °C
15.5
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
13
10.2b, c
TA = 70 °C
7.4b, c
A
Pulsed Drain Current (t = 300 µs)
IDM
70
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
7
3.1b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
30
Avalanche Energy
EAS
45
mJ
TC = 25 °C
7.8
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
5
3.5b, c
W
TA = 70 °C
2.2b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 80 °C/W.
Symbol
RthJA
RthJF
Typical
29
13
Maximum
35
16
Unit
°C/W
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