SI4190DY-T1-GE3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
SI4190DY-T1-GE3 Datasheet PDF : 9 Pages
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SI4190DY-T1-GE3
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.05
10
0.04
TJ = 150 °C
1
TJ = 25 °C
0.03
www.VBsemi.tw
ID = 15 A
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.02
0.01
TJ = 125 °C
TJ = 25 °C
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
200
0.2
160
0
120
- 0.2
ID = 5 mA
80
- 0.4
ID = 250 μA
- 0.6
40
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
10 ID Limited
100 μs
1 ms
1
Limited by RDS(on)*
10 ms
100 ms
0.1
1s
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
10 s
DC
100
Safe Operating Area, Junction-to-Ambient
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