SIHFS11N50A-GE3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SIHFS11N50A-GE3 Datasheet PDF : 10 Pages
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www.vishay.com
IRFS11N50A, SiHFS11N50A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Case (Drain)
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Ambient
RthJC
RthCS
RthJA
TYP.
-
0.50
-
MAX.
0.75
-
62
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VDS/TJ
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 6.6 Ab
VDS = 50 V, ID = 6.6 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Output Capacitance
Effective Output Capacitance
Coss
Coss eff.
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 400 Vc
MIN.
500
-
2.0
-
-
-
-
6.1
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.060
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.52
-
V
V/°C
V
nA
μA
S
1423
-
208
-
8.1
-
pF
2000
-
55
-
97
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
52
Qgs
VGS = 10 V
ID = 11 A, VDS = 400 V
see fig. 6 and 13b
-
-
13
nC
Qgd
-
-
18
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
td(on)
tr
td(off)
tf
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
VDD = 250 V, ID = 11 A
Rg = 9.1 , RD = 22
see fig. 10b
-
14
-
-
35
-
ns
-
32
-
-
28
-
MOSFET symbol
showing the
D
-
integral reverse
G
p - n junction diode
-
S
TJ = 25 °C, IS = 11 A, VGS = 0 Vb
-
TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μsb
-
-
-
11
A
-
44
-
1.5
V
510
770
ns
3.4
5.1
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fom 0 % VDS to 80 % VDS.
S13-1927-Rev. E, 09-Sep-13
2
Document Number: 91286
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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