IRFP22N60K(2008) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
IRFP22N60K Datasheet PDF : 8 Pages
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IRFP22N60K, SiHFP22N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.34
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 13 Ab
VDS = 50 V, ID = 13 Ab
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V , f = 1.0 MHz
VDS = 480 V , f = 1.0 MHz
VDS = 0 V to 480 V
VGS = 10 V
ID = 22 A, VDS = 480 V
see fig. 6 and 13b
VDD = 300 V, ID = 22 A,
RG = 6.2, VGS = 10 V,
see fig. 10b
MIN.
600
-
3.0
-
-
-
-
11
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.30
-
-
-
-
0.240
-
-
-
5.0
± 100
50
250
0.280
-
V
V/°C
V
nA
µA
Ω
S
3570
-
350
-
36
-
pF
4710
-
92
-
180
-
-
150
-
45
nC
-
76
26
-
99
-
ns
48
-
37
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
22
A
-
-
88
Body Diode Voltage
VSD
TJ = 25 °C, IS = 22 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
TJ = 25 °C
trr
TJ = 125 °C
IF = 22 A,
TJ = 25 °C
dI/dt = 100 A/µsb
Qrr
TJ =1 25 °C
-
590 890
ns
-
670 1010
-
7.2
11
µC
-
8.5
13
Reverse Recovery Current
IRRM
TJ = 25 °C
-
26
39
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
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Document Number: 91208
S-81274-Rev. A, 16-Jun-08
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