IRFP22N60K(2008) View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

IRFP22N60K
(Rev.:2008)

Power MOSFET

Vishay Semiconductors 

IRFP22N60K, SiHFP22N60K

Vishay Siliconix

25

20

15

10

5

0

25

50

75

100

125

150

TC, Case Temperature (° C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

1

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

D = 0.50

0.1

0.20

0.10

0.05

0.02

0.01

0.01

0.001

0.00001

SINGLE PULSE

(THERMAL RESPONSE)

P DM

t1

t2

Notes:

1. Duty factor D =

t1/ t 2

2. Peak T J = P DM x Z thJC + T C

0.0001

0.001

0.01

0.1

1

t1, Rectangular Pulse Duration (sec)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

15 V

VDS

L

Driver

RG

20 V

tp

D.U.T

IAS

0.01Ω

+

- VDD

A

Fig. 12a - Unclamped Inductive Test Circuit

Document Number: 91208

S-81274-Rev. A, 16-Jun-08

VDS

tp

IAS

Fig. 12b - Unclamped Inductive Waveforms

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5

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