Manufacturer
Part Name
Description
View
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Vishay](/logo/Vishay.png)
Vishay Semiconductors
Standard Metal Film Leaded Resistors
![FCI-CONNECTOR](/logo/FCI-CONNECTOR.png)
FCI connector
BERGSTAK 0.8MM RECEPTACLE ASSY
![FCI-CONNECTOR](/logo/FCI-CONNECTOR.png)
FCI connector
BERGSTAK 0.8MM RECEPTACLE ASSY