K522H1HACF-B050 Datasheet PDF - DatasheetQ.com

K522H1HACF-B050

Datasheet

Manufacturer

Part Name

Description

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Samsung

K522H1HACF-B050

2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM

Match & Start : K522H1HACF-B050

Laird Tech Smart Technology

K52

Thermally Conductive Insulators

Shenzhen Yixinwei Technology Co., Ltd.

K52

5.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Toshiba

K525

SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR

Toshiba

K526

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π-MOS)

Hitachi -> Renesas Electronics

K522

Silicon N-Channel Junction FET

Laird Tech Smart Technology

K52-3

Thermally Conductive Insulators

Laird Tech Smart Technology

K52-2

Thermally Conductive Insulators

MTRONPTI

K525C

8 pin DIP, 5.0 Volt, CMOS/TTL, Clock Oscillator

Laird Tech Smart Technology

K52-1

Thermally Conductive Insulators

Chip Integration Technology Corporation

K52ASG

5A Surface Mount Schottky Barrier Rectifiers

MTRONPTI

K525CE

8 pin DIP, 5.0 Volt, CMOS/TTL, Clock Oscillator

MTRONPTI

K525CS

8 pin DIP, 5.0 Volt, CMOS/TTL, Clock Oscillator

MTRONPTI

K525CM

8 pin DIP, 5.0 Volt, CMOS/TTL, Clock Oscillator

MTRONPTI

8 pin DIP, 5.0 Volt, CMOS/TTL, Clock Oscillator

MTRONPTI

8 pin DIP, 5.0 Volt, CMOS/TTL, Clock Oscillator

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