IS42RM16800E View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS42RM16800E

16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM

Integrated Silicon Solution 

IS42SM81600E / IS42SM16800E / IS42SM32400E

IS42RM81600E / IS42RM16800E / IS42RM32400E

Electrical Specifications

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameters

Vdd max

Maximum Supply Voltage

Vddq max

Maximum Supply Voltage for Output Buffer

Vin

Input Voltage

Vout

Output Voltage

Pd max

Allowable Power Dissipation

Ics Output Shorted Current

Topr

Operating Temperature

Com.

Ind.

Tstg

Storage Temperature

Rating

–0.5 to +4.6

–0.5 to +4.6

–0.5 to Vddq + 0.5

–1.0 to Vddq + 0.5

1

50

0 to +70

–40 to +85

–65 to +150

Unit

V

V

V

V

W

mA

°C

°C

°C

Notes:

1.  Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to

the device. This is a stress rating only and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2.  All voltages are referenced to Vss.

Capacitance Characteristics - x8, x16

Symbol

Cin1

Parameters

Input Capacitance: CLK

Min.

2.5

Cin2

Ci/o

Input Capacitance: All Other Input Pins 2.5

Data Input/Output Capacitance: I/Os

4.0

Max. Unit

3.5

pF

3.8

pF

6.5

pF

Capacitance Characteristics - x32

Symbol Parameters

Min. Max. Unit

Cin1

Cin2

Ci/o

Input Capacitance: CLK

2.5

3.5

pF

Input Capacitance: All Other Input Pins 2.5

3.8

pF

Data Input/Output Capacitance: I/Os

4.0

6.5

pF

14

Integrated Silicon Solution, Inc. - www.issi.com

Rev.  B

04/15/2011

Share Link: