IS42RM16800E View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS42RM16800E

16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM

Integrated Silicon Solution 

IS42SM81600E / IS42SM16800E / IS42SM32400E

IS42RM81600E / IS42RM16800E / IS42RM32400E

DC ELECTRICAL CHARACTERISTICS VDD = 3.3V/2.5V, x8 and x16

Symbol Parameter

Idd1(1)

Operating Current

Test Condition

One Bank Active, CL = 3, BL = 1,

tCLK = tCLK(min), tRC = tRC(min)

Idd2p (4)

Idd2ps (4)

Idd2n(2)

Idd2ns

Idd3p(2)

Idd3ps

Idd3n(2)

Idd3ns

Idd4

Idd5

Idd6

Idd7

Izz (3,4)

Precharge Standby Current

(In Power-Down Mode)

Precharge Standby Current

With Clock Stop

(In Power-Down Mode)

Precharge Standby Current

(In Non Power-Down Mode)

Precharge Standby Current

With Clock Stop

(In Non-Power Down Mode)

Active Standby Current

(In Power-Down Mode)

Active Standby Current

With Clock Stop

(In Power-Down Mode)

Active Standby Current

(In Non Power-Down Mode)

Active Standby Current

With Clock Stop

(In Non Power-Down Mode)

Operating Current

Auto-Refresh Current

Self-Refresh Current

Self-Refresh: CKE = LOW; tCK = tCK (MIN);

Address, Control, and Data bus inputs are

stable

Deep Power Down Current

CKE ≤ Vil (max), tCK = 15ns

CS ≥ Vdd - 0.2V

CKE ≤ Vil (max), CLK ≤ Vil (max)

CS ≥ Vdd - 0.2V

CS ≥ Vdd - 0.2V, CKE ≥ Vih (min)

tCK = 15 ns

CS ≥ Vdd - 0.2V, CKE ≥ Vih (min)

All Inputs Stable

CKE ≤ Vil (max), CS ≥ Vdd - 0.2V

tCK = 15 ns

CKE ≤ Vil (max), CLK ≤ Vil (max)

CS ≥ Vdd - 0.2V

CS ≥ Vdd - 0.2V, CKE ≥ Vih (min)

tCK = 15 ns

CS ≥ Vdd - 0.2V, CKE ≥ Vih (min)

All Inputs Stable

All Banks Active, BL =4, CL = 3

tCK = tCK(min)

tRC = tRC(min), tCLK = tCLK(min)

CKE ≤ 0.2V

Full Array, 85oC

Full Array, 45oC

Half Array, 85oC

Half Array, 45oC

1/4th Array, 85oC

1/4th Array, 45oC

1/8th Array, 85oC

1/8th Array, 45oC

1/16th Array, 85oC

1/16th Array, 45oC

CKE ≤ 0.2V

–6 –7 –75E Unit

90 85 90 mA

1

1

1 mA

1

1

1 mA

35 35 35 mA

20 20 20 mA

2

2

2 mA

2

2

2 mA

40 40 40 mA

25 25 25 mA

120 110 120 mA

180 140 180 mA

1.2 1.2 1.2 mA

1200

μA

900

1000

750

900

675

850

640

800

600

15 15 15 μA

Notes:

1. Idd (max) is specified at the output open condition.

2. Input signals are changed one time during 30ns.

3. Izz values shown are nominal at 25oC. Izz is not tested.

4. Tested after 500ms delay.

16

Integrated Silicon Solution, Inc. - www.issi.com

Rev.  B

04/15/2011

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