MT48LC4M32LFFC-10 View Datasheet(PDF) - Micron Technology
Part Name
Description
Manufacturer
MT48LC4M32LFFC-10 Datasheet PDF : 61 Pages
| |||
COMMAND INHIBIT
The COMMAND INHIBIT function prevents new com-
mands from being executed by the SDRAM, regardless of
whether the CLK signal is enabled. The SDRAM is effec-
tively deselected. Operations already in progress are not
affected.
NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to per-
form a NOP to an SDRAM which is selected (CS# is LOW).
This prevents unwanted commands from being regis-
tered during idle or wait states. Operations already in
progress are not affected.
LOAD MODE REGISTER
The mode register is loaded via inputs A0, BA0, BA1.
See mode register heading in the Register Definition
section. The LOAD MODE REGISTER and LOAD EX-
TENDED MODE REGISTER commands can only be is-
sued when all banks are idle, and a subsequent execut-
able command cannot be issued until tMRD is met.
ACTIVE
The ACTIVE command is used to open (or activate) a
row in a particular bank for a subsequent access. The
value on the BA0, BA1 inputs selects the bank, and the
address provided on inputs A0-A11 selects the row. This
row remains active (or open) for accesses until a
PRECHARGE command is issued to that bank. A
PRECHARGE command must be issued before opening a
different row in the same bank.
READ
The READ command is used to initiate a burst read
access to an active row. The value on the BA0, BA1 inputs
selects the bank, and the address provided on inputs A0-
A8 (x16) or A0-A7 (x32) selects the starting column loca-
tion. The value on input A10 determines whether or not
auto precharge is used. If auto precharge is selected, the
row being accessed will be precharged at the end of the
READ burst; if auto precharge is not selected, the row will
remain open for subsequent accesses. Read data appears
on the DQs subject to the logic level on the DQM inputs
two clocks earlier. If a given DQM signal was registered
HIGH, the corresponding DQs will be High-Z two clocks
later; if the DQM signal was registered LOW, the DQs will
provide valid data.
WRITE
The WRITE command is used to initiate a burst write
access to an active row. The value on the BA0, BA1 inputs
selects the bank, and the address provided on inputs A0-
A8 (x16) or A0-A7 (x32) selects the starting column loca-
tion. The value on input A10 determines whether or not
ADVANCE
128Mb: x16, x32
MOBILE SDRAM
auto precharge is used. If auto precharge is selected, the
row being accessed will be precharged at the end of the
WRITE burst; if auto precharge is not selected, the row
will remain open for subsequent accesses. Input data
appearing on the DQs is written to the memory array
subject to the DQM input logic level appearing coinci-
dent with the data. If a given DQM signal is registered
LOW, the corresponding data will be written to memory;
if the DQM signal is registered HIGH, the corresponding
data inputs will be ignored, and a WRITE will not be
executed to that byte/column location.
PRECHARGE
The PRECHARGE command is used to deactivate the
open row in a particular bank or the open row in all banks.
The bank(s) will be available for a subsequent row access
a specified time (tRP) after the PRECHARGE command is
issued. Input A10 determines whether one or all banks
are to be precharged, and in the case where only one bank
is to be precharged, inputs BA0, BA1 select the bank.
Otherwise BA0, BA1 are treated as “Don’t Care.” Once a
bank has been precharged, it is in the idle state and must
be activated prior to any READ or WRITE commands
being issued to that bank.
AUTO PRECHARGE
Auto precharge is a feature which performs the same
individual-bank PRECHARGE function described above,
without requiring an explicit command. This is accom-
plished by using A10 to enable auto precharge in con-
junction with a specific READ or WRITE command. A
PRECHARGE of the bank/row that is addressed with the
READ or WRITE command is automatically performed
upon completion of the READ or WRITE burst, except in
the full-page burst mode, where auto precharge does not
apply. Auto precharge is nonpersistent in that it is either
enabled or disabled for each individual READ or WRITE
command.
Auto precharge ensures that the precharge is initiated
at the earliest valid stage within a burst. The user must
not issue another command to the same bank until the
precharge time (tRP) is completed. This is determined as
if an explicit PRECHARGE command was issued at the
earliest possible time, as described for each burst type in
the Operation section of this data sheet.
BURST TERMINATE
The BURST TERMINATE command is used to trun-
cate either fixed-length or full-page bursts. The most
recently registered READ or WRITE command prior to
the BURST TERMINATE command will be truncated, as
shown in the Operation section of this data sheet.
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
15
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
Share Link: 